Electronic structures and electron spin decoherence in (001)-grown layered zincblende semiconductors

摘要

Electronic structure calculations for layered zincblende semiconductors aredescribed within a restricted basis formalism which naturally andnon-perturbatively accomodates both crystalline inversion asymmetry and cubicanisotropy. These calculations are applied to calculate the electron spindecoherence times $T_1$ and $T_2$ due to precessional decoherence in quantumwells. Distinctly different dependences of spin coherence times on mobility,quantization energy, and temperature are found from perturbative calculations.Quantitative agreement between these calculations and experiments is found forGaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb $(001)$-grown quantum wells. Theelectron spin coherence times for CdZnSe/ZnSe II-VI quantum wells arecalculated, and calculations of InGaAs/GaAs quantum wells appropiate forcomparison with spin-LED structures are also presented.